| EU RoHS |
Compliant with Exemption |
| ECCN (US) |
EAR99 |
| Part Status |
Active |
| HTS |
8541.29.00.95 |
| SVHC |
Yes |
| SVHC Exceeds Threshold |
Yes |
| Product Category |
Power MOSFET |
| Material |
Si |
| Configuration |
Single |
| Process Technology |
HEXFET |
| Channel Mode |
Enhancement |
| Channel Type |
N |
| Number of Elements per Chip |
1 |
| Maximum Drain Source Voltage (V) |
100 |
| Maximum Gate Source Voltage (V) |
±16 |
| Maximum Continuous Drain Current (A) |
17 |
| Maximum Drain Source Resistance (mOhm) |
105@10V |
| Typical Gate Charge @ Vgs (nC) |
34(Max)@5V |
| Typical Input Capacitance @ Vds (pF) |
800@25V |
| Maximum Power Dissipation (mW) |
79000 |
| Typical Fall Time (ns) |
26 |
| Typical Rise Time (ns) |
53 |
| Typical Turn-Off Delay Time (ns) |
30 |
| Typical Turn-On Delay Time (ns) |
7.2 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
| Packaging |
Tape and Reel |
| Pin Count |
3 |
| Standard Package Name |
TO-252 |
| Supplier Package |
DPAK |
| Mounting |
Surface Mount |
| Package Height |
2.39(Max) |
| Package Length |
6.73(Max) |
| Package Width |
6.22(Max) |
| PCB changed |
2 |
| Tab |
Tab |
